2SD1224 2002-07-23 1 toshiba transistor silicon npn epitaxial type (pct process) (darlington) 2SD1224 pulse motor drive, hammer drive applications switching applications power amplifier applications high dc current gain: h fe = 4000 (min) (v ce = 2 v, i c = 150 ma) low saturation voltage: v ce (sat) = 1.5 v (max) (i c = 1 a, i b = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 10 v collector current i c 1.5 a base current i b 0.15 a ta = 25c 1.0 collector power dissipation tc = 25c p c 10 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) base emitter collector
2SD1224 2002-07-23 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 30 v, i e = 0 D D 10 a emitter cut-off current i ebo v eb = 10 v, i c = 0 D D 10 a collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 30 D D v dc current gain h fe v ce = 2 v, i c = 150 ma 4000 D D collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 1 ma D D 1.5 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 1 ma D D 2.2 v turn-on time t on D 0.18 D storage time t stg D 0.6 D switching time fall time t f i b1 = ? i b2 = 1 ma, duty cycle 1% D 0.3 D s marking explanation of lot no. month of manufacture: january to december are denoted by letters a to l respectively. year of manufacture: last decimal digit of the year of manufacture 20 s input i b1 i b2 v cc 15 v i b1 15 ? i b2 output d1224 product no. lot no.
2SD1224 2002-07-23 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 0 0 common emitter tc = 100c 500 400 300 200 100 1 2 3 5 6 4 35 i b = 5 a 30 25 15 10 0 20 0 0 common emitter v ce = 2 v tc = 100c 1.0 0.8 0.6 0.4 0.2 0.4 0.8 1.2 2.0 2.4 25 1.6 ? 50 300 0.002 common emitter v ce = 2 v tc = 100c 5000 3000 500 1000 0.01 0.03 0.3 1 3 ? 50 0.1 10000 30000 25 0.1 0.002 tc = ? 50c 5 3 1 0.5 0.3 0.01 0.03 0.1 1 3 25 0.3 common emitter i c /i b = 1000 10 100 0 0 common emitter tc = ? 50c 500 400 300 200 100 1 2 3 5 6 4 160 i b = 20 a 140 120 80 60 0 100 40 0 0 common emitter tc = 25c 60 i b = 10 a 500 400 300 200 100 1 2 3 5 6 50 4 40 30 20 0
2SD1224 2002-07-23 4 collector current i c (a) collector-emitter voltage v ce (v) safe operating area ambient temperature ta (c) p c ? ta collector power dissipation p c (w) collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) 0 0 (1) tc = ta infinite heat sink (2) ceramic substrate 50 50 0.8 mm (3) no heat sink 40 80 120 160 200 240 280 2 4 6 8 10 (1) (2) (3) 30 0.1 0.002 common emitter i c /i b = 1000 0.01 0.1 0.3 1 3 5 10 tc = ? 50c 100 0.5 25 0.03 1 0.3 1 30 10 3 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 0.1 i c max ( continuous ) i c max (pulsed)* dc operation tc = 25c v ceo max 0.3 0.5 1 3 5 10 ms* 1 ms*
2SD1224 2002-07-23 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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